| 摘要 |
Voltage converters are arranged in units of columns in a memory device. Each voltage converter is connected to a column decoder. The column decoder receives a column address signal and supplies a column selection signal to the voltage converter. The voltage converters apply a ground level voltage to the source junctions of the drive transistor pairs of the memory cells of the selected columns, and a voltage higher than the ground level voltage to the source junctions of the drive transistor pairs of the memory cells of the nonselected columns so as to decrease power consumption in the nonselected columns as compared with that in the selected columns.
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