发明名称 STATIC TYPE SEMICONDUCTOR MEMORY DEVICE AND ITS DRIVING METHOD
摘要 PURPOSE:To minimize the increase of a cycle time to the limit and to check the total cells without overhead by providing a second multiplexer using the output of an error correcting circuit and the output of a selector as an input, and inputted selectively one of the outputs to an output buffer. CONSTITUTION:The titled device is equipped with a memory matrix 27 consisting of a memory cell attached with, a first port and a second port each is capable of independently access, a reading device 25 and a writing device 26 corresponding respectively to the address capable of function through each port, and a second multiplexer 24 using the output 21 of the error correcting circuit 22 and the output of the selector as the input and supplying selectively one of the outputs to an output buffer 25. Immediately after the termination of reading the subsequent access is made possible by the same port to eliminate substantially the rewriting time. In addition, the user is removed from the consciousness of checking, and the overhead is removed by utilizing the idle time to sequentially check the total bits.
申请公布号 JPS63181197(A) 申请公布日期 1988.07.26
申请号 JP19870013565 申请日期 1987.01.22
申请人 NEC CORP 发明人 YOSHIDA MASAAKI
分类号 G11C29/00;G11C11/34;G11C11/401;G11C29/42 主分类号 G11C29/00
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