| 摘要 |
This invention relates an apparatus for etching a film such as an oxide film applied on one surface of a semiconductor material, and the apparatus includes a cup-shaped basin, a chuck for supporting a semiconductor material to be treated at lower surface thereof and a pair of electrical terminals contacting with an etchant which has just contacted with a film. The chuck is rotatably mounted spaced above the basin. The electric terminals detect changes of ionic density in the etchant in order to discriminate an end point of etching. A point of re-increase in ionic density in etchant is used as an etching end point.
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