| 摘要 |
PURPOSE:To obtain an analytical apparatus having a good quantifying property, high sensitivity and the high resolving power in a depth direction, by a method wherein the beam emitted from a synchrotron is allowed to be incident on a specimen to be measured at a critical angle or less and the intensity of generated characteristic X-rays is recorded while ion etching is performed. CONSTITUTION:The exciting X-rays 2 emitted from a synchrotron radiation beam source 1 are converted to a diameter of several hundred mum by a slit 3 to irradiate a specimen 4 to be measured at a critical angle or less. When the specimen 4 is composed of glass, the critical angle is about 0.15 deg.. The beam after total reflection from the specimen 4 is absorbed by a proper absorber 5. The characteristic X-rays 6 generated from the specimen 4 are introduced into a semiconductor detector 8 in such a state that a shutter 7 is opened. The value counted by the detector 8 is recorded on a recorder 10 through a signal processing system 9 along with the incident X-ray quantity measured by the absorber 5 of incident X-ray quantity. Further, an ion etching gun 11 has a structure so as to obliquely irradiate the specimen 4 and the vicinity of an incident X-ray irradiation part is scanned by an electric field plate 12 so that the X-rays can irradiate an etching surface.
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