| 摘要 |
PURPOSE:To obtain a semiconductor-device structure which can form a memory without using a capacitor by a method wherein a magnetic-substance region is formed inside a semiconductor substrate or on the surface of said substrate. CONSTITUTION:At least one magnetic-substance region is formed inside a semiconductor substrate or on the surface of said substrate. For example, a data-hold circuit M is constructed in such a way that a magnetic-substance region 11, data-write lines 12, data-read lines 13 and a reference-resistor line 14 are formed on the outermost layer of a semiconductor substrate 15. The magnetic-substance region 11 is formed in such a way that ions of Ni or the like of a ferromagnetic substance are implanted into the substrate 15; the write lines 12, the read lines 13 and the reference-resistor line 14 are composed of impurity diffused layers. The write lines 12 and the read lines 13 are arranged in such a way that they are situated near the magnetic-substance region 11 and surround this region. A datawrite operation is executed in such a way that electricity is supplied to the write lines 12 from a write circuit W and that the magnetic-substance region 11 is magnetized by a current magnetic field.
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