VERFAHREN ZUR HERSTELLUNG VON HALBLEITERMATERIAL DER GRUPPEN II UND VI DES PERIODISCHEN SYSTEMS DURCH CHEMISCHE DAMPFABLAGERUNG METALLORGANISCHER VERBINDUNGEN

摘要

A method for growing a Group II-VI epitaxial layer over a substrate 11 includes the steps of directing a plurality of vapor flows towards the substrate 11, including a Group II elemental mercury vapor, at least one of the Group II organic vapor and Group VI organic vapor having organic groups which sterically repulse the second one of the Group II and Group VI organic vapors or which provide electron transfer to the Group II atom or electron withdrawal from the Group VI atom. Substantially independent pyrolsis of the Group II organic vapor is provided over the growth region 12 of the substrate 11, and accordingly, Group II depletions such as cadmium depletion in the epitaxial films provided over the substrate being susbstantially reduced by the choice of organic groups.