| 摘要 |
PURPOSE:To prevent a through-hole part from being disconnected and, furthermore, to reduce the contact resistance at the through-hole part by a method wherein a silicon film is left only at the lower half at the side wall of the through-hole part by an anisotropic etching method and, after that, a metal wiring film is formed on the whole surface with a view to forming a second-layer Al wiring film with uniform film thickness at the through-hole part. CONSTITUTION:When a semiconductor device of multilayer interconnection structure which is wired via a through hole made at an interlayer insulating film 4 is to be manufactured, the through hole is made at the interlayer insulating film 4; after that, a silicon film 7 is formed on the whole surface; the silicon film 7 is left only at the lower half at the side wall of the through hole by an anisotropic etching method; after that, a metal wiring film 6 is formed on the whole surface. For example, after a first-layer Al wiring film 3 has been patterned on an oxide film 2 formed on a silicon substrate 1 and an interlayer insulating film 4 has been formed, a through hole is formed and a polycrystalline silicon film 7 is formed on the whole surface. Then, the polycrystalline silicon film 7 is etched by an anisotropic ion etching method in such a way that it is left at the lower half at the side wall of the through hole. After that, a second-layer Al wiring film 6 is formed by a sputtering method.
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