发明名称 PHASE SYNCHRONOUS SEMICONDUCTOR LASER ARRAY
摘要 PURPOSE:To realize a far field pattern of a single rope and to contrive to be able to obtain a high-output and strong-directivity laser beam by a method wherein reflecting parts with respect to light by oscillation excitation are each provided at each point, which is positioned in nearly the middles between adjacent oscillation stiripes of a laser array and is located on the end face of an element or in the vicinity of the end face. CONSTITUTION:Reflecting parts 5 having high reflection characteristics with respect to light by oscillation excitation are each provided at each point which is positioned in nearly the middles between adjacent oscillation stripes 2 on an end surface 3 on one side. In a laser array, laser oscillation is performed by a resonance which is formed by making light reflect partially in the interior on the end face 3 and an end face 4, but by adding the reflecting parts 5 here, the lowest order mode comes to be subjected to more the effect of the reflecting parts compared to the highest order mode. Thereby, a far field pattern of a single rope can be realized and a high-output and strong-directivity laser beam can be obtained.
申请公布号 JPS63175488(A) 申请公布日期 1988.07.19
申请号 JP19870006080 申请日期 1987.01.16
申请人 NIPPON TELEGR & TELEPH CORP <NTT> 发明人 MATSUMOTO TAKAO
分类号 H01S5/00;H01S5/40 主分类号 H01S5/00
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