| 摘要 |
PURPOSE:To simplify the process by a method wherein the resistance of a part of amorphous silicon as a sensing layer is augmented to form the part into an insulating film applicable to interlayer insulation between upper and lower electrode wirings. CONSTITUTION:Contact holes 4 are made on the region excluding the sensing part of an amorphous silicon 3 to expose a part of the first electrode wirings 2 and then after selectively masking the sensing part of amorphous silicon 3, other regions are irradiated with intensive light source for around one hour to form the photoirradiated part into an insulating film by photo-deterioration. Later, the second electrode wirings 5 connected to sensing element are formed into specified pattern on the insulated amorphous silicon to be connected to the first electrode wirings 2 through the intermediary of the contact holes 4. In such a constitution, a part of amorphous silicon 3 is used as the insulating film making it needless to form another insulating film. Through these procedures, the process can be eliminated to simplify the manufacture. |
