发明名称 |
Method of forming an improved gate dielectric for a MOSFET on an insulating substrate |
摘要 |
A method for forming a silicon dioxide layer on a silicon island on an insulating substrate includes the steps of initially providing an insulating substrate having a major surface on which a silicon island is disposed. The surface of the silicon island is then thermally oxidized and a silicon layer is deposited on the oxidized island and the portion of the substrate surface adjacent to the island. This entire silicon layer is then oxidized and a conductive polycrystalline silicon electrode is deposited thereon.
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申请公布号 |
US4758529(A) |
申请公布日期 |
1988.07.19 |
申请号 |
US19850793312 |
申请日期 |
1985.10.31 |
申请人 |
RCA CORPORATION |
发明人 |
IPRI, ALFRED C. |
分类号 |
H01L27/12;H01L21/336;H01L21/86;H01L29/78;H01L29/786;(IPC1-7):H01L21/473 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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