| 摘要 |
PURPOSE:To make the thermal conditions of the semiconductor thin film on a seed and the semiconductor thin film on an insulating film similar by isolating a ground semiconductor region which is made the seed of a recrystallizing semiconductor thin film from a ground substrate with the insulating film. CONSTITUTION:An SiO2 film 15, a polycrystalline Si film 17 and an SiO2 film 18 are formed on a crystalline Si substrate 11 by providing an aperture 16 which is made a seed. Then, after the film 17 is melted and recrystallized and a single crystal Si layer 17' is formed, the film 18 is removed and an MOS transistor consisting of a gate electrode 22, a source 13 and a drain 14 is formed on the layer 17'. Then, a region 21 which is to be made the seed is left and after an SiO2 film 22 is formed by oxidizing the layer 17', an SiO2 film 25 is formed as an interlayer insulating film. Then, after an aperture 26 is provided in the seed 21 on the film 25, a polycrystalline Si film 27 and an SiO2 film 28 are formed and a single crystal Si layer 27' is formed by melting and recrystallizing the film 27. Then, a ground Si region is isolated from the substrate 11 by the films 15, 25.
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