| 摘要 |
PURPOSE:To make photo response characteristic favorable by laminating an amorphous semiconductor having block type construction on a scanning substrate for reading signals and actuating with an electric field in which charge doubling action occurs in the layer of the amorphous semiconductor. CONSTITUTION:By forming a light transmitting conductive film on a glass substrate 7 and separating the light transmitting conductive film in a photo etching method, an individual reading electrode 2 is obtained. Next, on the reading electrode 2, a mask where long-sized hole is provided is made to pass through and a CeO2 thin film as a rectifier contact auxiliary layer 3 and an amorphous Se as a photo conductive film 4 are vapor-deposited by the thickness about 0.5-6mum. By depositing the light transmitting conductive film 5 on the amorphous Se layer 4 in the methods of vapor-depositing and sputtering, etc., the photoelectric conversion part is formed. By impressing the electric field in a direction where the light transmitting conductive film 5 becomes in a positive electric potential and projecting a light beam, electron positive hole pair is generated in the amorphous Se layer 4 and the charge doubling action is caused when the hole runs, so that the rapid photo response characteristic can be realized.
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