发明名称 Halvlederapparat indeholdende en felteffekttransistor med isoleret styreelektrode og fremgangsmåde til fremstilling af et sådant halvlederapparat.
摘要 1,228,472. IGFETS. PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd. 23 Feb., 1968 [28 Feb., 1967], No. 52475/70. Divided out of 1,228,471. Heading H1K. The subject-matter of this Specification is included in Specification 1,228,471 from which it is divided. The claims relate to an IGFET in which the source and drain regions extend to one face of a layer or body of opposite conductivity type where one of them is contacted by a metal electrode layer, the other of said regions having a lateral extension buried within said layer or body in an area which does not underlie the other region.
申请公布号 DK119936(B) 申请公布日期 1971.03.15
申请号 DK19680000751 申请日期 1968.02.26
申请人 N.V. PHILIPS' GLOEILAMPENFABRIEKEN 发明人 RIJKENT JAN NIENHUIS
分类号 H01L23/482;H01L23/522;H01L27/07;H01L29/06;H01L29/417;H01L29/423;H01L29/78;(IPC1-7):H01L11/14;H01L19/00 主分类号 H01L23/482
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