| 摘要 |
PURPOSE:To maintain the etching characteristics of an article to be etched without cleaning a reaction chamber while improving productivity by controlling RF power so as to keep cathode drop voltage (hereinafter called Vdc) constant. CONSTITUTION:When an article to be etched is dry-etched in a gas plasma atmosphere, RF power is controlled so as to hold Vdc value constant. That is, when the treating number of the articles to be etched is increased, the etching rate of SiO2 is maintained constant by controlling RF power so as to keep the rate of SiO2 and the value of Vdc constant. The method is also effective for other films to be dry-etched such as a nitride film except an SiO2 film, and is particularly effectual in the continuous treatment of dry etching with the generation of deposition.
|
