| 摘要 |
PURPOSE:To improve an transfer speeds and yield by a method wherein a semiconductor multilayer film including an active layer is selectively formed on a semiconductor substrate except where mesas are positioned and a multiplicity of oscillating sections capable of operating independently from each other is constructed of a current constriction structure and an optical waveguide. CONSTITUTION:During a crystal growing process, its growth is blocked on top of mesas by a dielectric coating of SiN or the like formed on top of the mesas, and the growth therefore proceeds only to fill up the regions between the mesas. A blocking layer 7 is locally removed in a stripe geometry along a resonator axis and the resultant groove is filled up with a p-type clad layer 8. This process results in a current constriction structure and in a transverse mode controlling structure wherein a portion of a mode longitudinally distributed from an active layer 5 reaches the blocking layer 7 at both ends of the stripe and sustains loss there. An epitaxially grown layer is divided at mesas on a substrate 1, for the electrical isolation of several laser oscillating sections from each other. P-type electrodes 12 are built respectively for the oscillating sections for the driving of one oscillating section independently from the others. |
