| 摘要 |
PURPOSE:To reduce the leakage current while improving the reliability by a method wherein an insulating film is laid between the sidewalls of the first layer electrode to form the second layer electrode on the flattened surface. CONSTITUTION:The first layer electrode wherein a polysilicon film 13 provided with conductivity by phosphorus diffusion and an oxide film 14 are patterned is formed on another oxide film 12 on a semiconductor substrate 11 formed by thermal oxidation. Next, a polysilicon layer 15 to be an etch-stopper film is laminated on the surface of this electrode and then a CVD oxide film 16 is deposited and then etched back until the layer 15 is exposed to flatten the surface. Finally, a polysilicon layer 17 as the second electrode is formed on the surface to notably reduce the leakage current between sidewalls by excellent thick insulating film between the pattern sidewalls as well as the second electrode is formed stably on the flat surface to improve the reliability. |
