| 摘要 |
PURPOSE:To remove the contact between metal protrusions by forming the film thickness of the metal protrusion to less than the thickness of a photosensitive resin film. CONSTITUTION:An aluminum layer is formed on the surface of a semiconductor substrate 1 and a wiring layer 2 consisting of a wiring region 2a made of aluminum and an insulating region 2b made of aluminum oxide is formed by selectively oxidizing an anode. Then, a protective film 3 of such as phosphosilicate glass is formed on the surface of the wiring layer 2 and the contact hole to the wiring region 2a is formed in the protective film 3. An adhesive metal layer 5 is formed on the exposed surfaces of the protective film 3 and the wiring region 2a and a barrier metal layer 6 is formed on the surface of the adhesive metal layer 5. Then, a photosensitive resin film 7 is formed on the surface of the barrier metal layer 6 to a thickness equal to or more than a metal protrusion. Then, a contact hole 7a is formed in the upper region of the wiring region 2a of the photosensitive resin film 7 and the metal protrusion 8 is formed. Then, the photosensitive resin film 7 is removed and the other conductive layers are removed by leaving the barrier metal layer 6 directly under the metal protrusion 8 and the adhesive metal layer 5. This removes the contact between the metal protrusions formed on an adjacent electrode and high density and can provide high reliability.
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