发明名称 PROCESS FOR MAKING A FULLY-CRYSTALLINE SILICON NITRIDE SINTERED BODY
摘要 In the prodn., by pressing and sintering, of a dense, high temp. creep resistant, fully crystalline sintered body of a phase isomorphic with beta silicon nitride plus yttrium-aluminium-garnet from a powder mixt. of silicon nitride, yttrium oxide aluminium nitride, silicon dioxide, promoter for crystallisation of the garnet from the sialonic melt, and organic binder, the novelty is that the aluminium nitride: yttrium oxide:silicon dioxide wt. ratio is 0.960+/-0.096:1.337+/-0.134:1.
申请公布号 DE3471647(D1) 申请公布日期 1988.07.07
申请号 DE19843471647 申请日期 1984.08.11
申请人 HUTSCHENREUTHER AG 发明人 MATHIS, BRUNO, DR.;HAHN, CHRISTOPH, DR.
分类号 C04B35/584;C04B35/597;(IPC1-7):C04B35/58 主分类号 C04B35/584
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