| 摘要 |
PURPOSE:To form a structure which can be readily constructed by connecting solar battery cells having pin structure of a (amorphous)-Si layer to diodes having ten times of thickness of P type layer to the solar battery in the same structure in antiparallel. CONSTITUTION:Transparent electrode patterns 40-44 of solar battery and transparent electrode patterns 45-49 of protective diode unit are formed on a transparent insulating substrate 3. This thickness is formed to approx. 2,000-3,000Angstrom . Then, the P type a-Si layer is reduced in thickness to approx. 100Angstrom by the resist pattern of the same shape as the a-Si pattern of the protective diode unit. Then, the resist is exfoliated, and a non-doped layer of a-Si is formed in approx. 0.5mum by a blow discharge. Then, the N type a-Si layer is formed in approx. 500Angstrom and patterned. Subsequently, the electrode patterns are formed so that the cells 1 are connected in series and the diodes 2 are connected in antiparallel to the cells 1. |
