发明名称 |
COMPOUND SEMICONDUCTOR INTEGRATED CIRCUIT |
摘要 |
PURPOSE:To improve the external circuit driving capacity of a low impedance by constituting a logic circuit part of an FET formed on a compound semiconductor layer and constituting an output buffer part of a bipolar transistor formed on a silicone substrate. CONSTITUTION:An inverter based upon a source coupled FET logic (SCFL) is constituted by forming MESFET T1-T3 and load resistors R1, R2 on the compound semiconductor layer. The output B of the inverter is connected to the base of a bipolar transistor B1 to obtain an opened emitter output C. |
申请公布号 |
JPS63164527(A) |
申请公布日期 |
1988.07.07 |
申请号 |
JP19860311397 |
申请日期 |
1986.12.25 |
申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
HASEGAWA KATSUYA |
分类号 |
H03K19/08;H01L21/20;H01L27/00;H01L27/06;H01L27/095;H03K19/0175;H03K19/086 |
主分类号 |
H03K19/08 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|