发明名称 COMPOUND SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 PURPOSE:To improve the external circuit driving capacity of a low impedance by constituting a logic circuit part of an FET formed on a compound semiconductor layer and constituting an output buffer part of a bipolar transistor formed on a silicone substrate. CONSTITUTION:An inverter based upon a source coupled FET logic (SCFL) is constituted by forming MESFET T1-T3 and load resistors R1, R2 on the compound semiconductor layer. The output B of the inverter is connected to the base of a bipolar transistor B1 to obtain an opened emitter output C.
申请公布号 JPS63164527(A) 申请公布日期 1988.07.07
申请号 JP19860311397 申请日期 1986.12.25
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 HASEGAWA KATSUYA
分类号 H03K19/08;H01L21/20;H01L27/00;H01L27/06;H01L27/095;H03K19/0175;H03K19/086 主分类号 H03K19/08
代理机构 代理人
主权项
地址
您可能感兴趣的专利