| 摘要 |
Dynamic register, which has a transmission gate device (1) with an n-channel field-effect transistor (1a) and an inverting device (2) with a p-channel field-effect transistor (2a) and an n-channel field-effect transistor (2b), the gate of which is connected to the output of the transmission gate device (1), in which register a stray capacitance (3) is formed between the gates of the field-effect transistors (2a, 2b) of the inverting device and earth and in which the threshold voltage of the n-channel field-effect transistor (1a) of the transmission gate (1) is chosen to be smaller than the threshold voltage of the n-channel field-effect transistor (2b) forming the inverting device (2). <IMAGE>
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