发明名称 SPUTTERING CATHODE
摘要 PURPOSE:To rapidly form a film of ferromagnetic substance, by constituting, of a ferromagnetic substance, a plasma shield around a target fitted to a cathode body and by homopolarly magnetizing the above plasma shield and target by means of magnets so as to form a magnetic field parallel to the target surface. CONSTITUTION:In a chamber 1 into which Ar gas, etc., are introduced by means of evacuation, a backing plate 2 is fitted to a sputtering cathode body 4 having cooling-water inlet and outlet 6, 7, on which a target 3 is placed and fixed. A plasma shield 5 composed of a ferromagnetic substance is disposed around this target 3, and the target 3 and the plasma shield 5 are subjected to homopolar magnetization by means of magnets 1, by which a magnetic field 10 parallel to the target surface is produced above the target 3. In this state, a voltage is impressed on the cathode body 4 by means of an electric power source 9 so as to produce plasma. Plasma is made high-density above the target 3 by means of the above magnetic field 10, and the film of ferromagnetic substance can be formed at high speed on the surface of a substrate 12 disposed opposite to the above.
申请公布号 JPS63162865(A) 申请公布日期 1988.07.06
申请号 JP19860312152 申请日期 1986.12.26
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 YOKOYAMA MASAHIDE;IKEDA TANEJIRO
分类号 C23C14/34 主分类号 C23C14/34
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