发明名称 MANUFACTURE OF CHROMIUM TARGET FOR SPUTTERING
摘要 PURPOSE:To manufacture a uniform Cr target having high purity and stable quality, by filling a Cr powder into a metallic vessel and hermetically vacuum- sealing the above to apply hot isostatic pressing and by subjecting the resulting high-density compact to slicing and then to the prescribed machining. CONSTITUTION:The Cr powder is filled into the metallic vessel of stainless steel, etc., to undergo hermetical vacuum sealing. At this time, it is preferable that the metallic vessel filled with the Cr powder is reduced to vacuum while being heated up to about 400-600 deg.C, and proper degree of vacuum is about 1X10<-4>-1X10<-5>Torr. Subsequently, the above hermetically vacuum-sealed vessel is subjected to omnidirectionally uniform heating and pressurizing treatment at about 1,100-1,300 deg.C under a pressure of about 800-1,200kg/cm<2> by means of hot isostatic pressing. The resulting uniform and high-density Cr compact is sliced into a sheet of the prescribed thickness, which is machined to be formed into the Cr target for sputtering.
申请公布号 JPS63162863(A) 申请公布日期 1988.07.06
申请号 JP19860310571 申请日期 1986.12.25
申请人 MITSUBISHI METAL CORP 发明人 FUKUSHIMA MASATOSHI;FUKUI SOICHI
分类号 C23C14/34 主分类号 C23C14/34
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