发明名称 |
Process for the production of self-adjusted bipolar transistor structures having a reduced extrinsic base resistance |
摘要 |
Self-adjusted bipolar transistors having reduced extrinsic base resistance are produced by forming an emitterterminal from a polysilicon layer structure and etching free the polysilicon layer structure using the emitter layer structure as a mask. Sidewall insulating layers are provided with a metallically conductive layer. This layer is self-adjusting in relation to the emitter zone and surrounds the emitter in an annular formation. The structure improves the foursided base wiring around the emitter and is used in the production of highly integrated bipolar circuits.
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申请公布号 |
US4755476(A) |
申请公布日期 |
1988.07.05 |
申请号 |
US19860931802 |
申请日期 |
1986.11.17 |
申请人 |
SIEMENS AKTIENGESELLSCHAFT |
发明人 |
BOEHM, WILLI R.;SCHABER, HANS-CHRISTIAN |
分类号 |
H01L29/73;H01L21/285;H01L21/331;H01L21/60;H01L29/732;(IPC1-7):H01L21/265 |
主分类号 |
H01L29/73 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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