摘要 |
PURPOSE:To prevent deterioration in sense sensitivity by driving a pre-sense bipolar sense amplifier through capacitive coupling so as to compensate unbalance of the base-emitter junction forward voltage (VBE) of two bipolar transistors (TRs). CONSTITUTION:CMOS filp-flops Q3-Q8, bipolar TRs Q15, Q16, and a differential amplifier comprising MOS TRs and coupling capacitors C3, C4 are used for a sense amplifier of a bit line 3 reading an output data of memory cells C1, Q2. A column signal 9 is selected in the active cycle and the differential amplifier is activated. Although the potential of a node 17 is lowerd through the activated amplifier, since the potential of both nodes 15, 16 is lowered by the coupling of the capacitors C3, C4 while the DELTAVBE of the nodes 15, 16 is kept, no adverse effect is given onto the fluctuation of the VBE of the TRs Q15, Q16. Thus, the deterioration of the sensitivity of the sense amplifier is prevented and the reliability is improved. |