| 摘要 |
PURPOSE:To construct a large-sized picture screen by a method therein the width in an overlapping region of reticle pattern images on a wafer is set to be the wave- optically overlapping amount which corresponds to a prescribed multiple of the distance delta from the boundary of a geometrical image to the position of the intensity corresponding to a prescribed value for the threshold value for resist exposure in the intensity distribution of a projected image of a reticle pattern. CONSTITUTION:In order to input the information to operate the optimum overlapping amount for each exposure patten to be used for composing a picture screen, an input means 13 is installed. At an operation means 10, an optimum value for the overlapping volume for each projection pattern at a first exposure and a second exposure is obtained on the basis of a wavelength lambda of the exposure light, the numerical aperture (N.A.) of a projection lens L and a sigma value as a lighting condition, to be input from the input means; the amount required to shift a stage 8 is then calculated. At the boundary region between a pattern P1 for the first exposure and a pattern P2 for the second exposure, overlapping amount for both patterns require by physical opties is set to be twice the distance delta between a position where the intensitt distribution of the image of one exposure pattern becomes half a resist threshold value and a geometrical-optical boundary line l.
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