发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To contrive improvement in reliability of a fuse wiring by a method wherein the generation of passivation cracks are suppressed by providing floating potential metal layers, which are separated one-dimensionally pinching an insulating layer, on the upper layer of a wiring layer. CONSTITUTION:Potentially floating metal layers 2 and 5, which are separated on a level pinching an insulating layer 4, are provided on the upper layer of Al wirings (including a fuse) 1 and 7. When said Al fuse is provided in open form, the passivation cracks generating by the heating by a current and the shifting of the Al fuse can be prevented by the metal layers 2 and 5. Accordingly, the reliability of the fuse wiring can be improved.
申请公布号 JPS63160242(A) 申请公布日期 1988.07.04
申请号 JP19860314867 申请日期 1986.12.23
申请人 NEC CORP 发明人 HIZAKI HIROSHI
分类号 H01L21/82;H01L21/3205 主分类号 H01L21/82
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