A photo diode formed by a substrate of CdxHg1-xTe covered with a layer of CdTe forming a p-n junction. The substrate may be p-type in which case the layer is n-type or vice versa. An array of photo diodes may be formed by covering the substrate with semi-insulating CdTe and forming islets of In on the CdTe. Heating causes In to diffuse into the CdTe doping it n-type. This results in regions of n-type CdTe surrounded by semi-insulating CdTe each region forming, with the substrate, a photo diode. The heating also causes diffusion between the CdxHg1-xTe and CdTe to give a graded heterostructure. Electrical connections are made to the substrate, and each n-type region. The n-type CdTe region may alternatively be formed by molecular beam epitaxial growth techniques using a beam of In dopant.
申请公布号
DE3278553(D1)
申请公布日期
1988.06.30
申请号
DE19823278553
申请日期
1982.06.02
申请人
THE SECRETARY OF STATE FOR DEFENCE IN HER BRITANNIC MAJESTY'S GOVERNMENT OF THE UNITED KINGDOM OF GREAT BRITAIN AND
发明人
DEAN, ANTHONY BRIAN;FARROW, ROBIN FREDERICK CHARLES;MIGLIORATO, PIERO;WHITE, ANTHONY MICHAEL;WILLIAMS, GERALD MARTIN