| 摘要 |
PURPOSE:To produce the title high-purity SiC whisker having an excellent acicular property in good yield, by heating a compact contg. SiO2, specified carbon black, and H2 to a specified temp. CONSTITUTION:Carbon black having >=100m<2>/g BET specific surface, <=35nm mean particle diameter, and 0.06-0.2g/cm<3> bulk density is prepared. A catalyst (Fe, Ni, Co, or their compd.) is incorporated into the carbon black. The carbon black contg. the catalyst and the compact contg. SiO2 are heated at 1,400-1,700 deg.C in an H2 atmosphere. |
