| 摘要 |
<p>PURPOSE:To implement high density and high integration, by providing connecting electrodes and internal wirings, which connect the electrodes electrically, on the upper and rear surfaces of semiconductor device chips, coupling said connecting electrodes of the facing semiconductor device chips, and providing a constitution of three-dimensional laminated layers CONSTITUTION:All surfaces 16-1-16-4 of semiconductor device chips 11-1-11-4 face upward the facing bumps are bonded by a thermocompressing bonding method, electrically connected and mechanically coupled. Semiconductor device parts 13-1-13-4 on the semiconductor device chips 11-1-11-4 are electrically connected to the terminals on a ceramic substrate 12 through the bumps and internal wirings. 4 semiconductor device 10 has a structure, wherein the semiconductor device chips 11-1-11-4 are electrically connected themselves and laminated in three-dimensional four layers. Thus the high density and high integration of the semiconductor device parts can be implemented.</p> |
