| 摘要 |
PURPOSE:To improve outer quantum efficiency and to enable the manufacturing of a high reliability short-wave laser diode, by forming a light-emitting element with active layers made of AlInGaP or InGaP on a Si substrate. CONSTITUTION:A visible light-emitting element is composed of an active layer, which serves as a light-emitting part and is made of AlInGaP or InGaP, and a substrate which is made of Si. A III-V compound semiconductor in which the amount of lattice mismatching to the active layer is within a 0.5% is formed as a third semiconductor layer between the active layer and the substrate. GaAs, GaP, InGaP, GaAsP, and InGaAs are can be used as materials of the third semiconductor substrate. Especially, if InGaAsP four-element mixed crystal is formed in the range of 1mum to 2mum in thickness, transition density in InGaP and AlInGaP layers piled thereon becomes 10<3>cm<-2> to 10<4>cm<-2> so as to remarkably improve crystallinity. The third semiconductor layer is allowed to grow directly on the Si substrate. Otherwise, a layer of either GaP, GaAsP, InGaP, or In-GaAsP, whose lattice constants approximate to that of GaAs or Si, is interposed as a four semiconductor layer, and then the third semiconductor layer is allowed to grow thereon. |
