发明名称 PSEUDO STATIC MEMORY DEVICE
摘要 PURPOSE:To access a word line which has been selected once and has been reset without resetting address information, by generating a usual access signal by allowing it to respond to not only an external address signal but also a level variation of a write-enable signal from the outside or a refreshing signal. CONSTITUTION:An address transition detecting circuit 3 is constituted so as to respond to a level variation of a write-enable signal WE or a refreshing chip-enable signal CEF, and to generate a chip enable signal CEN. In case an arbitrary word line is selected once, and reset, and thereafter, the word line is selected again, a usual access chip-enable signal CEN is generated by inputting the write-enable signal WE or the refreshing chip-enable signal CEF to the address transition detecting circuit 3. In such a way, it becomes unnecessary to reset especially address information of the word line from the outside, and to access the word line based thereon.
申请公布号 JPS63155495(A) 申请公布日期 1988.06.28
申请号 JP19860301622 申请日期 1986.12.19
申请人 FUJITSU LTD 发明人 TAKEMAE YOSHIHIRO
分类号 G11C11/403;G11C11/34;G11C11/406 主分类号 G11C11/403
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