发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 PURPOSE:To prevent the generation of electrical disconnection between an internal wiring and an external terminal even when the exposed section of an aluminum electrode is corroded by the intrusion of moisture by forming a high melting-point metallic layer just under the aluminum electrode and electrically connecting said aluminum electrode and the internal wiring through said high melting-point metallic layer. CONSTITUTION:A high melting-point metallic film 10 and an aluminum layer 4 are brought into contact through a first contact hole section 12 bored to a phosphosilicate glass film 3, and an extension section 11 and an aluminum wiring 14 are connected electrically through a second contact section 13 shaped to the phosphosilicate glass film 3. An electric signal is transmitted over an internal circuit through a gold small-gage wire 8, the aluminum layer 4, the high melting-point metallic film 10, the extension section 11 from the film 10 and the aluminum wiring layer 14 from an external circuit, but electrical connection is kept by the high molting-point metallic film 10 in the aluminum layer 4 and the aluminum wiring layer 14 even when the exposed section of an aluminum electrode 7 is corroded by the intrusion of moisture, thus generating no electrical disconnection.
申请公布号 JPS63153831(A) 申请公布日期 1988.06.27
申请号 JP19860301966 申请日期 1986.12.17
申请人 MITSUBISHI ELECTRIC CORP 发明人 HIDA YOICHI
分类号 H01L21/60 主分类号 H01L21/60
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