发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 PURPOSE:To contrive to improve the freedom in the design of wirings by a method wherein third wirings, which are extended from one end of a logical region to the other end, are provided between first wirings of lower layer and second wirings of upper layer, and the selected first and second wirings are connected to each other by the third wirings. CONSTITUTION:Power wirings 8 consisting of a fourth layer of Al film are extended in such a way as to cross a logical region from its one end to the other end. Moreover, power wirings 9 consisting of a third layer of Al film are provided for connecting the wirings 8 and second layer-power wirings. The wirings 9 are extended in a direction to intersect the wirings 8 and cross the logical region in such a way as to reach to the other end of the logical region from one end thereof. By providing the wirings 9, the design of the wirings 8 provided above the wirings 9, the design of a bump electrode 5B, which is connected to the wirings 8 and is used as an external electrode, and the design of power wirings 12A and 13A provided below the wirings 9 can be performed separately. Moreover, the design of the wirings 8 and the electrode 5B can be performed separately from the layout or constitution of fundamental cell rows and fundamental cells. Hereby, the freedom in the design of the wirings can be improved.
申请公布号 JPS63152144(A) 申请公布日期 1988.06.24
申请号 JP19860298711 申请日期 1986.12.17
申请人 HITACHI LTD 发明人 KOBAYASHI TORU;YAMADA TOSHIO;TANAKA KAZUO;HAMAMOTO MASATO
分类号 H01L21/82;H01L21/3205;H01L21/60;H01L21/822;H01L27/04;H01L27/118 主分类号 H01L21/82
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