| 摘要 |
PURPOSE:To prevent short-circuit between the upper layer winding and the lower layer winding, and constitute a multilayer interconnection, by making the surface of the upper layer exposed in a through hole insulative. CONSTITUTION:Lower Al wirings 31 and 32 are formed on an SiO2 film 2 on an Si chip 1, and, via an SiO2 interlayer insulating film 4, upper Al wirings 51 and 52 are formed, which are covered with an insulative film 6. Through holes 71 and 72 are formed penetrating these, and a connection wiring 8 to the lower wirings 31 and 32 are formed. The wiring 8 is of, for example, W, Mo, Cd or Al which is selectively formed by laser CVD. The exposed surface of the upper layer wirings 51 and 52 in the holes 71 and 72 are made insulative; thus an Al2O3 film 9, for example, is formed to prevent the contact with the connection wiring 8. By this constitution, an multilayer interconnection structure is obtained without short-circuit.
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