| 摘要 |
PURPOSE:To obtain a thin-film transistor, mutual conductance thereof is large and the capacitance of a capacitor thereof is large, by forming at least one of a gate insulating film or a capacitor insulating film for storage by a tungsten bronze type multiple oxide film of large dielectric-breakdown field strength and relative permittivity. CONSTITUTION:A borosilicate glass substrate 11 is coated with a gate electrode consisting of an Al film and a lower electrode 13 for a storage capacitor, and the whole surface containing both electrodes is coated with a tungsten bronze type multiple oxide film 14 of large dielectric-breakdown field strength and relative permittivity. The film 14 consists of substances represented by a general formula AB2O6, and A represents at least one kind of Pb, Ca, Sr, Ba or Cd and B at least one kind of Ta or Nb. That is, the PbNb2O6 film 14 is applied through sputtering, the whole surface is coated with an Al2O3 film 15, a semiconductor film 16 consisting of In and CdS is formed on the film 15, and a source electrode 17 and a drain electrode 18 are each set up around the film 16. The upper section of the film 15 is coated with an upper electrode 19 for the capacitor. |
