| 摘要 |
PURPOSE:To enable the improvement in the yield of a grown crystal having a specific impurity concentration distribution along the direction of growth, as far as possible, by varying the impurity concentration in a material of the part corresponding to the initial stage of growth from that of the other parts according to the segregation coefficient of the impurity in the crystal growth using a liquid growth process. CONSTITUTION:The impurity concentration of a growth material of a part contacting with a seed crystal and used in the initial stage of crystal growth is made to be lower than that of the other parts when the segregation coefficient of the impurity is >1 or is made to be higher than the other parts when the coefficient is <1. Crystal growth is slowly started from the interface between the seed crystal and molten liquid or solution of the growth material keeping the above concentration.
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