| 摘要 |
PURPOSE:To obtain a resist material having high sensitivity and high-gamma by substituting deuterium for hydrogen in the molecules of a resist. CONSTITUTION:Methyl methacrylate used as a monomer is brought into an exchange reaction with heavy water (D2O) to completely substitute deuterium for hydrogen in the molecule. The monomer is polymerized in a sealed tube with azobisisobutyronitrile as a polymn. initiator to synthesize a polymer. This polymer is subjected to reprecipitation refining with a methanol-THF solvent, dissolved in methylcellosolve acetate and passed through a microfilter to filter off the insoluble matter. The resulting filtrate is used as a resist soln. This resist soln. is dropped on a silicon water, applied to the wafer by high-speed rotation, baked in an oven and radiated with electron beams at 20kV acceleration voltage. A positive type electron beam resist material having high sensitivity and high-gamma can be obtd. |
