| 摘要 |
PURPOSE:To make the contact of a first wiring layer and a second wiring layer stable and excellent and to improve the yield rate of semiconductor integrated circuits, by filling a recess part on the surface before the first wiring layer is formed with the same metal layer as the first wiring layer beforehand. CONSTITUTION:A metal layer 3 comprising the same kind of material as that of a first wiring layer 5 is evaporated and formed on a semiconductor substrate 1 covered with a silicon dioxide film to the same thickness as that of the step difference of the silicon dioxide film. Photoresist 4 is formed on the upper surface by a rotary applying method. After post baking for improving adhesion, the photoresist on the protruding part of the metal layer 3 is treated until the photoresist is ashed and re moved. Thereafter, the metal layer 3 is etched away until the layer is aligned with the bottom part of the photoresist 4. The photoresist 4 is released by using releasing liquid. The entire surface is lightly etched, and a first wiring layer 5 is evaporated by sputtering. Then, the first wiring layer 5, an interlayer insulating film 6 and a second wiring layer 7 are formed by using a photoetching technology and a selective etching technology, and a semiconductor device having a multilayer interconnection structure is obtained. The depths of through holes are all the same in the surface of the semiconductor substrate.
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