| 摘要 |
A photovoltaic device comprises a transparent substrate, an amorphous silicon layer structure of a p-i-n type formed on the substrate and comprised of a p-layer, i-layer and n-layer, and an electrode formed on the amorphous silicon layer structure, wherein either the p-layer and n-layer of the amorphous silicon layer structure, on which light is incident is constituted such that its optical forbidden band gap is greater on the i-layer side than on the substrate side. |
