| 摘要 |
PURPOSE:To make it possible to branch a reaction gas stream and to branch it not only in two and three directions but also in more than three directions, by sliding two main bodies, and communicating the through holes of the main bodies. CONSTITUTION:First and second main bodies 17 and 18 are made to face each other through the sliding surfaces. In the main body 17, a through hole is provided so as to reach the outside part of the sliding surface from the sliding surface, and another through hole is provided so as to face the side surface from the sliding surface. Both through holes are provided independently. In the main body 19, third and fourth through holes are provided independently so as to reach the outside part of the sliding surface from the sliding surface. A reacting gas for forming a semiconductor thin film flows from one through hole to one through hole. A purging gas flows from the other through hole to the other through hole. Then the main bodies 17 and 19 are slidden at the sliding surfaces, and the through holes and the other through holes are communicated, respectively. Then the reacting gas is made to flow through the through holes and the purging gas is made to flow through the other through holes by switching the streams. Thus not only the switching of the gas stream can be switched quickly but also the effect of the remaining gas is eliminated. Therefore, a very steep hetero-interface and a P-N junction can be formed. The gas stream can be branched in the many directions by providing the many through holes.
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