发明名称 DRY VAPOR-PHASE PLATING METHOD
摘要 PURPOSE:To densify and smooth a thin film to be obtained by vibrating a material to be worked. CONSTITUTION:Thin film is formed on a substrate 1 to be worked by using a dry vapor-phase plating method using a high-frequency magnetron sputtering device. At this time, the substrate 1 is vibrated, for example, by using an ultrasonic oscillator 3. The substrate 1 can be further rotated or reciprocated while vibrating the substrate. By this method, growth of a columnar crystal from the surface of the substrate 1 is prevented, and the crystal grains are made fine. Accordingly, voids are not generated in the grain boundary, a dense thin film without defects of pinholes, etc., is formed, and the surface of the thin film is smoothed.
申请公布号 JPS63149368(A) 申请公布日期 1988.06.22
申请号 JP19860295461 申请日期 1986.12.11
申请人 FURUKAWA ELECTRIC CO LTD:THE 发明人 SUZUKI TAKUYA
分类号 C23C14/22;C23C14/50;C23C16/44 主分类号 C23C14/22
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