| 摘要 |
PURPOSE:To obtain the title sputtering device without decreasing the yield even when a deposit falls by setting annularly and rotatively arranged plural permanent magnets eccentrically with the center of rotation of a target, and aligning any point of the permanent magnet with the center of the target. CONSTITUTION:Dilute gaseous Ar is supplied into a vacuum vessel 1. A semiconductor wafer 3, etc., are arranged in opposition to a planar target 2, and an electric field E is impressed in the direction of the target 2 from the wafer 3, etc. Besides, a magnetic flux H generated in the normal direction in a plane parallel to the cross section of an annular permanent magnet or annularly arranged plural permanent magnets 4 rotates the flight path of the electrons flown by the electric field E, and the ionization function of an Ar atom is increased. Any point of the permanent magnet 4 is aligned with the center of the target 2, and the magnetic 4 is rotated with the center of the target 2 as the center of rotation. Consequently, only the central part of the target 2 is not deeply sputtered, and a deposit is not generated on the region.
|
