发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To reduce parasitic capacitance without making an insulation film thick by providing a cavity just below outgoing electrodes. CONSTITUTION:A cavity 6 is prepared just below outgoing electrodes 5 by removing a Ti layer of the outgoing electrodes 5. If, for example, it is assumed that a thickness of the cavity 6 is identical to that of an insulation film 4, 1/4 of parasitic capacitance will be included in a collector side in parallel, because a relative dielectric constant of air is 1. Accordingly, parasitic capacitance if reduce to 1/3 on the whole.
申请公布号 JPS63148680(A) 申请公布日期 1988.06.21
申请号 JP19860295906 申请日期 1986.12.12
申请人 NEC CORP 发明人 KANAMORI SHUJI
分类号 H01L29/41;H01L21/331;H01L21/768;H01L23/522;H01L27/06;H01L29/72;H01L29/73;H01L29/732 主分类号 H01L29/41
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