| 摘要 |
PURPOSE:To mass-produce SiC at high yield in a method for heat-treating a mixture of fine SiO powder, material contg. C and SiC powder or its molded article by using ultrafine powder as the above-mentioned fine SiO powder. CONSTITUTION:A mixture consisting of SiO2 powder or SiO2-contg. oxide powder and material contg. C and/or metallic Si powder or its molded article is heat-treated under reduced pressure. SiO powder is obtained from SiO vapor generated in this case by means of vapor phase condensation. Primary particles of SiO powder obtained by such a way are extremely ultrafine powder not more than about 0.1mu. The mixture of this ultrafine SiO powder and material contg. C or its molded article is heat-treated in Ar, H2 or gaseous CO or in a gaseous mixture thereof. By this method, fine and high-purity SiC powder can be mass-produced industrially in high yield. |
