| 摘要 |
PURPOSE:To improve the uniformity of resist stripping and to improve treatment capacity, by providing a preheating chamber in contact with a treatment chamber and preheating a semiconductor substrate at the time of subjecting the resist of the semiconductor substrate to plasma stripping in the treatment chamber. CONSTITUTION:This plasma stripping device which strips the resist coated on the semiconductor substrate is constituted of the preheating chamber 1 for storing the semiconductor substrate and the semiconductor substrate treatment chamber 2 which is connected with a vacuum pump 5 and a gas introducing port 6 and is provided with an anode 3b connected to a high-frequency power supply 4 and a grounded cathode 3a. The preheating chamber 1 and the semicon ductor substrate treatment chamber 2 are kept shut off by a gate valve 7. The semiconductor substrate to be treated in this constitution is preheated in the preheating chamber 1 and is then charged into the treatment chamber 2 where the substrate is subjected to the stripping treatment. The treatment capacity is thereby improved and the stripping treatment is executed in a short period.
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