发明名称 HIGH-OUTPUT HIGH-FREQUENCY TRANSISTOR
摘要 PURPOSE:To operate input and output cells uniformly, and to improve high-frequency characteristics by wiring bonding wires for an input wired from electrodes for the input on the output terminal side in number more than the number of bonding wires for an input wired from electrodes for the input on the input terminal side. CONSTITUTION:A plurality of cells 11a, 11b in two rows in a direction vertical to wires connecting an input terminal 7 are formed onto a transistor chip 9, and a plurality of emitter bonding electrodes 12a, 12b composed of two rows are shaped to each of the cells. Emitter bonding wires 13a, 13b are wired to a capacitor chip 14 by these emitter bonding electrodes 12a, 12b. The number of the emitter bonding wires 13b to the cell 11b on the output terminal 8 side is larger than that of the emitter bonding wires 13a to the cell 11a on the input terminal 7 side. Accordingly, both cells are operated uniformly, the power gains of a transistor are further improved, and a band can be enlarged.
申请公布号 JPS63144552(A) 申请公布日期 1988.06.16
申请号 JP19860293804 申请日期 1986.12.09
申请人 发明人
分类号 H01L21/60;H01L23/12;H01L23/50 主分类号 H01L21/60
代理机构 代理人
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