| 摘要 |
PURPOSE:To enable a high quality film to be uniformly formed at a high film forming speed on a material on which the film is formed by providing the material at the side of and in parallel with a comb-like transmitting electrode outside of a pair of the electrodes by applying high frequency power to the conductive comb-like electrode which can transmit a gaseous material. CONSTITUTION:A comb-like electrode (gas transmitting electrode 3) applied with high frequency power is connected to an impedance matching circuit which enables impedance matching. A film forming equipment is so constructed that a material on which a film is formed is provided at the side of and in parallel with the transmitting electrode 3 outside of a pair of the electrodes and a raw material gas supplied in plasma is brought on the surface of the material on which a thin film is formed through the gas transmitting electrode 3. Since the interval between the gas transmitting electrode and the material on which the thin film is formed controls the speed of forming the thin film, if the interval is made constant at any position of the material, the speed of forming the thin film can be made constant irrespective of the position and the uniform thickness and high quality thin film can be formed irrespective of the shape or the size of the material on which the thin film is formed.
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