| 摘要 |
PURPOSE:To realize the formation of a minimum-sized emitter region and, at the same time, to intend the high density by a method wherein a mask part of a base region for a bipolar semiconductor device is constructed by the same material as a gate electrode for a MOS semiconductor device. CONSTITUTION:An n-well diffused layer 2 and an n-collector diffused layer 8 are formed; a LOCOS oxide film 7 and a diffused layer 9 are formed; in addition, a gate oxide film 4 for a MOS semiconductor device is formed; after that, gate electrodes 5-1, 5-2 for a p-type MOS transistor and an n-type transistor as well as an emitter diffused mask 5-3 on a base layer 9 for a bipolar npn-type transistor are formed at the same time. Then, the region for the p-type MOS transistor is covered with a resist material 17-1; an n<+> type source-drain region 16 is formed by making use of the LOCOS oxide film 7 and the polysilicon gate 5-2 as a mask; at the same time, an emitter diffused layer 10 is formed. Then, the surface of a substrate other than the p-type MOS transistor 12 is coated with a resist material 12-2; a p<+> type diffused layer 3 is formed. After that, an interlayer insulating film 6 is formed on the whole surface; a contact hole is made; an aluminum wiring part 15 is formed. |
