| 摘要 |
PURPOSE:To prevent a hump phenomenon by channeling by the ion implantation of a source and a drain by bringing the surface of a polycyrstalline silicon film constituting a gate electrode to an amorphous state through ion implantation, forming a polycrystalline silicon electrode pattern and shaping a source- drain diffusion layer through an ion implantation method. CONSTITUTION:An silicon dioxide film 11 in 50nm is deposited onto the surface of a polycrystalline silicon film 3 through a vapor growth method. Phosphorus in 1X10<15>/cm<3> is implanted through the silicon dioxide film 11 to form an amorphous layer 12 on the surface of the polycrystalline silicon film. Ion implantation is also performed similarly in arsenic, argon and silicon, and a surface layer can be brought to an amorphous state by the quantity of implantation of 1X10<14>/cm<3> or more. The amorphous layer 12 is shaped, and the silicon dioxide film 11 is removed. The pattern of a gate electrode is formed. An N<-> diffusion layer 4 is shaped through the implantation of phosphorus, and a spacer 5 is formed by an silicon dioxide film. Arsenic ions are implanted to N<+> diffusion layers 6, thus forming a source and a drain in low-concentration drain structure, N<->/N<+> double implantation constitution.
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